All MOSFET. OSG55R028HTF Datasheet

 

OSG55R028HTF Datasheet and Replacement


   Type Designator: OSG55R028HTF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 455 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 181.8 nC
   tr ⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 504 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO247
 

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OSG55R028HTF Datasheet (PDF)

 ..1. Size:968K  oriental semi
osg55r028htf.pdf pdf_icon

OSG55R028HTF

OSG55R028HTF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switc

 4.1. Size:415K  oriental semi
osg55r028hf.pdf pdf_icon

OSG55R028HTF

OSG55R028HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 7.1. Size:929K  oriental semi
osg55r092hf.pdf pdf_icon

OSG55R028HTF

OSG55R092HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 7.2. Size:912K  oriental semi
osg55r099hszf.pdf pdf_icon

OSG55R028HTF

OSG55R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

Datasheet: OSG50R1K5DF , OSG50R1K5FF , OSG50R1K5PF , OSG50R500AF , OSG50R500DF , OSG50R500FF , OSG50R500PF , OSG55R028HF , K4145 , OSG55R030HZF , OSG55R070FF , OSG55R070HF , OSG55R074FZF , OSG55R074HZF , OSG55R092FF , OSG55R092HF , OSG55R099HSZF .

History: MEE6240T

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