All MOSFET. OSG55R070HF Datasheet

 

OSG55R070HF Datasheet and Replacement


   Type Designator: OSG55R070HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 76.2 nS
   Cossⓘ - Output Capacitance: 350.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO247
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OSG55R070HF Datasheet (PDF)

 ..1. Size:398K  oriental semi
 osg55r070hf.pdf pdf_icon

OSG55R070HF

OSG55R070HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:404K  oriental semi
 osg55r070ff.pdf pdf_icon

OSG55R070HF

OSG55R070FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 6.1. Size:388K  oriental semi
 osg55r074hszf.pdf pdf_icon

OSG55R070HF

OSG55R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 6.2. Size:418K  oriental semi
 osg55r074fzf.pdf pdf_icon

OSG55R070HF

OSG55R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

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Keywords - OSG55R070HF MOSFET datasheet

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