All MOSFET. OSG55R074FZF Datasheet

 

OSG55R074FZF Datasheet and Replacement


   Type Designator: OSG55R074FZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 98.1 nS
   Cossⓘ - Output Capacitance: 350.1 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.074 Ohm
   Package: TO220F
 

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OSG55R074FZF Datasheet (PDF)

 ..1. Size:418K  oriental semi
 osg55r074fzf.pdf pdf_icon

OSG55R074FZF

OSG55R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.1. Size:388K  oriental semi
 osg55r074hszf.pdf pdf_icon

OSG55R074FZF

OSG55R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 5.2. Size:414K  oriental semi
 osg55r074hzf.pdf pdf_icon

OSG55R074FZF

OSG55R074HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 6.1. Size:398K  oriental semi
 osg55r070hf.pdf pdf_icon

OSG55R074FZF

OSG55R070HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

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Datasheet: OSG50R500DF , OSG50R500FF , OSG50R500PF , OSG55R028HF , OSG55R028HTF , OSG55R030HZF , OSG55R070FF , OSG55R070HF , IRFP260 , OSG55R074HZF , OSG55R092FF , OSG55R092HF , OSG55R099HSZF , OSG55R108FZF , OSG55R108HZF , OSG55R108KZF , OSG55R108PZF .

History: SVG063R5NL5 | SQJA00EP | NCE3085K | NCE3080L | SFB063N80AC3 | AUIRF7648M2TR1 | RD3L140SP

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