FDMS8023S
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMS8023S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 59
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 49
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 41
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024
Ohm
Package:
POWER56
FDMS8023S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMS8023S
Datasheet (PDF)
..1. Size:259K fairchild semi
fdms8023s.pdf 
August 2010FDMS8023SN-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.4 mFeatures General DescriptionThe FDMS8023S has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 26 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 23 Apackage technologies have been combined to offer the lowest rDS(
7.1. Size:289K fairchild semi
fdms8026s.pdf
August 2010FDMS8026SN-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 mFeatures General DescriptionThe FDMS8026S has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 Apackage technologies have been combined to offer the lowest Adv
7.2. Size:281K fairchild semi
fdms8025s.pdf
August 2010FDMS8025SN-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.8 mFeatures General DescriptionThe FDMS8025S has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 Apackage technologies have been combined to offer the lowest rDS(
7.3. Size:286K fairchild semi
fdms8027s.pdf
August 2010FDMS8027SN-Channel PowerTrench SyncFETTM 30 V, 22 A, 5.0 mFeatures General DescriptionThe FDMS8027S has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 Apackage technologies have been combined to offer the lowest Adv
7.4. Size:258K fairchild semi
fdms8020.pdf
November 2011FDMS8020N-Channel PowerTrench MOSFET 30 V, 42 A, 2.5 mFeatures General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 26 AThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.6 m at VGS = 4.5 V, ID = 21.5 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced P
Datasheet: FDMS7692A
, STM6920
, FDMS7694
, STM6916
, FDMS7698
, STM6915
, FDMS7700S
, STM6914
, 7N65
, STM6913A
, FDMS8025S
, STM6912
, FDMS8026S
, STM6718
, FDMS8027S
, STM6716
, FDMS8460
.
