All MOSFET. OSG55R099HSZF Datasheet

 

OSG55R099HSZF Datasheet and Replacement


   Type Designator: OSG55R099HSZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 219 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 63.1 nS
   Cossⓘ - Output Capacitance: 226.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO247
 

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OSG55R099HSZF Datasheet (PDF)

 ..1. Size:912K  oriental semi
osg55r099hszf.pdf pdf_icon

OSG55R099HSZF

OSG55R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 6.1. Size:929K  oriental semi
osg55r092hf.pdf pdf_icon

OSG55R099HSZF

OSG55R092HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 6.2. Size:871K  oriental semi
osg55r092ff.pdf pdf_icon

OSG55R099HSZF

OSG55R092FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 7.1. Size:398K  oriental semi
osg55r070hf.pdf pdf_icon

OSG55R099HSZF

OSG55R070HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

Datasheet: OSG55R028HTF , OSG55R030HZF , OSG55R070FF , OSG55R070HF , OSG55R074FZF , OSG55R074HZF , OSG55R092FF , OSG55R092HF , AON7410 , OSG55R108FZF , OSG55R108HZF , OSG55R108KZF , OSG55R108PZF , OSG55R140FF , OSG55R140PF , OSG55R160HZF , OSG55R160PZF .

History: IRF7456PBF | SFB096N200C3 | AM110N06-08P | NP90N04VLG | RJK0223DNS | 2SJ485 | KI5406DC

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