All MOSFET. OSG55R108FZF Datasheet

 

OSG55R108FZF Datasheet and Replacement


   Type Designator: OSG55R108FZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 71.1 nS
   Cossⓘ - Output Capacitance: 246 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm
   Package: TO220F
 

 OSG55R108FZF substitution

   - MOSFET ⓘ Cross-Reference Search

 

OSG55R108FZF Datasheet (PDF)

 ..1. Size:392K  oriental semi
 osg55r108fzf.pdf pdf_icon

OSG55R108FZF

OSG55R108FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.1. Size:413K  oriental semi
 osg55r108kzf.pdf pdf_icon

OSG55R108FZF

OSG55R108KZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.2. Size:889K  oriental semi
 osg55r108hzf.pdf pdf_icon

OSG55R108FZF

OSG55R108HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.3. Size:891K  oriental semi
 osg55r108pzf.pdf pdf_icon

OSG55R108FZF

OSG55R108PZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

SHOW MORE

Datasheet: OSG55R030HZF , OSG55R070FF , OSG55R070HF , OSG55R074FZF , OSG55R074HZF , OSG55R092FF , OSG55R092HF , OSG55R099HSZF , SPP20N60C3 , OSG55R108HZF , OSG55R108KZF , OSG55R108PZF , OSG55R140FF , OSG55R140PF , OSG55R160HZF , OSG55R160PZF , OSG55R290AF .

History: SFB063N80C3 | SWI13N60K2 | SHD226412R | CEP12N6 | PFP12N65 | AO4616 | TSM2313CX

Keywords - OSG55R108FZF MOSFET datasheet

 OSG55R108FZF cross reference
 OSG55R108FZF equivalent finder
 OSG55R108FZF lookup
 OSG55R108FZF substitution
 OSG55R108FZF replacement

 

 
Back to Top

 


 
.