OSG55R108HZF Datasheet. Specs and Replacement

Type Designator: OSG55R108HZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 219 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 71.1 nS

Cossⓘ - Output Capacitance: 246 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm

Package: TO247

OSG55R108HZF substitution

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OSG55R108HZF datasheet

 ..1. Size:889K  oriental semi
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OSG55R108HZF

OSG55R108HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio... See More ⇒

 5.1. Size:413K  oriental semi
 osg55r108kzf.pdf pdf_icon

OSG55R108HZF

OSG55R108KZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio... See More ⇒

 5.2. Size:392K  oriental semi
 osg55r108fzf.pdf pdf_icon

OSG55R108HZF

OSG55R108FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio... See More ⇒

 5.3. Size:891K  oriental semi
 osg55r108pzf.pdf pdf_icon

OSG55R108HZF

OSG55R108PZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio... See More ⇒

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Detailed specifications: OSG55R070FF, OSG55R070HF, OSG55R074FZF, OSG55R074HZF, OSG55R092FF, OSG55R092HF, OSG55R099HSZF, OSG55R108FZF, K4145, OSG55R108KZF, OSG55R108PZF, OSG55R140FF, OSG55R140PF, OSG55R160HZF, OSG55R160PZF, OSG55R290AF, OSG55R290DF

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