All MOSFET. OSG55R108HZF Datasheet

 

OSG55R108HZF Datasheet and Replacement


   Type Designator: OSG55R108HZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 219 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 71.1 nS
   Cossⓘ - Output Capacitance: 246 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm
   Package: TO247
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OSG55R108HZF Datasheet (PDF)

 ..1. Size:889K  oriental semi
 osg55r108hzf.pdf pdf_icon

OSG55R108HZF

OSG55R108HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.1. Size:413K  oriental semi
 osg55r108kzf.pdf pdf_icon

OSG55R108HZF

OSG55R108KZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.2. Size:392K  oriental semi
 osg55r108fzf.pdf pdf_icon

OSG55R108HZF

OSG55R108FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.3. Size:891K  oriental semi
 osg55r108pzf.pdf pdf_icon

OSG55R108HZF

OSG55R108PZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

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