OSG55R160HZF PDF and Equivalents Search

 

OSG55R160HZF PDF Specs and Replacement


   Type Designator: OSG55R160HZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 8.8 nS
   Cossⓘ - Output Capacitance: 145.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO247
 

 OSG55R160HZF substitution

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OSG55R160HZF PDF Specs

 ..1. Size:959K  oriental semi
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OSG55R160HZF

OSG55R160HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio... See More ⇒

 5.1. Size:894K  oriental semi
osg55r160fzf.pdf pdf_icon

OSG55R160HZF

OSG55R160FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio... See More ⇒

 5.2. Size:900K  oriental semi
osg55r160pzf.pdf pdf_icon

OSG55R160HZF

OSG55R160PZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio... See More ⇒

 7.1. Size:413K  oriental semi
osg55r108kzf.pdf pdf_icon

OSG55R160HZF

OSG55R108KZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio... See More ⇒

Detailed specifications: OSG55R092HF , OSG55R099HSZF , OSG55R108FZF , OSG55R108HZF , OSG55R108KZF , OSG55R108PZF , OSG55R140FF , OSG55R140PF , IRF1010E , OSG55R160PZF , OSG55R290AF , OSG55R290DF , OSG55R290FF , OSG55R290PF , OSG55R380AF , OSG55R380DF , OSG55R380FF .

Keywords - OSG55R160HZF MOSFET specs

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