OSG55R380DF Datasheet. Specs and Replacement

Type Designator: OSG55R380DF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22.8 nS

Cossⓘ - Output Capacitance: 63.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO252

OSG55R380DF substitution

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OSG55R380DF datasheet

 ..1. Size:432K  oriental semi
 osg55r380df.pdf pdf_icon

OSG55R380DF

OSG55R380DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.1. Size:398K  oriental semi
 osg55r380af.pdf pdf_icon

OSG55R380DF

OSG55R380AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.2. Size:925K  oriental semi
 osg55r380ff.pdf pdf_icon

OSG55R380DF

OSG55R380FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.3. Size:959K  oriental semi
 osg55r380pf.pdf pdf_icon

OSG55R380DF

OSG55R380PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

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Detailed specifications: OSG55R140PF, OSG55R160HZF, OSG55R160PZF, OSG55R290AF, OSG55R290DF, OSG55R290FF, OSG55R290PF, OSG55R380AF, STP80NF70, OSG55R380FF, OSG55R380PF, OSG55R580AF, OSG55R580DEF, OSG55R580DF, OSG55R580FEF, OSG55R580FF, OSG55R580PF

Keywords - OSG55R380DF MOSFET specs

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