All MOSFET. OSG55R580AF Datasheet

 

OSG55R580AF Datasheet and Replacement


   Type Designator: OSG55R580AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 7.7 nC
   tr ⓘ - Rise Time: 8.4 nS
   Cossⓘ - Output Capacitance: 46.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO251
 

 OSG55R580AF substitution

   - MOSFET ⓘ Cross-Reference Search

 

OSG55R580AF Datasheet (PDF)

 ..1. Size:373K  oriental semi
 osg55r580af.pdf pdf_icon

OSG55R580AF

OSG55R580AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:853K  oriental semi
 osg55r580fef.pdf pdf_icon

OSG55R580AF

OSG55R580FEF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS E series is optimized for its switching chara

 5.2. Size:407K  oriental semi
 osg55r580df.pdf pdf_icon

OSG55R580AF

OSG55R580DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:1001K  oriental semi
 osg55r580pf.pdf pdf_icon

OSG55R580AF

OSG55R580PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

SHOW MORE

Datasheet: OSG55R290AF , OSG55R290DF , OSG55R290FF , OSG55R290PF , OSG55R380AF , OSG55R380DF , OSG55R380FF , OSG55R380PF , P60NF06 , OSG55R580DEF , OSG55R580DF , OSG55R580FEF , OSG55R580FF , OSG55R580PF , OSG60R017HT3F , OSG60R018HT3ZF , OSG60R020HT3F .

History: SVT044R5NDTR

Keywords - OSG55R580AF MOSFET datasheet

 OSG55R580AF cross reference
 OSG55R580AF equivalent finder
 OSG55R580AF lookup
 OSG55R580AF substitution
 OSG55R580AF replacement

 

 
Back to Top

 


 
.