OSG60R020HT3F Datasheet. Specs and Replacement

Type Designator: OSG60R020HT3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 637 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 112 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49.2 nS

Cossⓘ - Output Capacitance: 536 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO247

OSG60R020HT3F substitution

- MOSFET ⓘ Cross-Reference Search

 

OSG60R020HT3F datasheet

 ..1. Size:978K  oriental semi
 osg60r020ht3f.pdf pdf_icon

OSG60R020HT3F

OSG60R020HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit... See More ⇒

 6.1. Size:395K  oriental semi
 osg60r028htf.pdf pdf_icon

OSG60R020HT3F

OSG60R028HTF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switc... See More ⇒

 6.2. Size:952K  oriental semi
 osg60r028ht3f.pdf pdf_icon

OSG60R020HT3F

OSG60R028HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit... See More ⇒

 6.3. Size:415K  oriental semi
 osg60r028hf.pdf pdf_icon

OSG60R020HT3F

OSG60R028HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

SHOW MORE

Detailed specifications: OSG55R580AF, OSG55R580DEF, OSG55R580DF, OSG55R580FEF, OSG55R580FF, OSG55R580PF, OSG60R017HT3F, OSG60R018HT3ZF, RFP50N06, OSG60R022HT3ZF, OSG60R028HF, OSG60R028HT3F, OSG60R028HTF, OSG60R030HT3ZF, OSG60R030HTZF, OSG60R030HZF, OSG60R031HT3ZF

Keywords - OSG60R020HT3F MOSFET specs

 OSG60R020HT3F cross reference

 OSG60R020HT3F equivalent finder

 OSG60R020HT3F pdf lookup

 OSG60R020HT3F substitution

 OSG60R020HT3F replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs