OSG60R030HTZF Datasheet and Replacement
Type Designator: OSG60R030HTZF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 91.5 nS
Cossⓘ - Output Capacitance: 555 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO247
OSG60R030HTZF substitution
OSG60R030HTZF Datasheet (PDF)
osg60r030htzf.pdf

OSG60R030HTZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di
osg60r030ht3zf.pdf

OSG60R030HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
osg60r030hzf.pdf

OSG60R030HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio
osg60r031hzf.pdf

OSG60R031HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio
Datasheet: OSG60R017HT3F , OSG60R018HT3ZF , OSG60R020HT3F , OSG60R022HT3ZF , OSG60R028HF , OSG60R028HT3F , OSG60R028HTF , OSG60R030HT3ZF , IRFB31N20D , OSG60R030HZF , OSG60R031HT3ZF , OSG60R031HZF , OSG60R035HF , OSG60R035HT5ZF , OSG60R035TT5ZF , OSG60R038HT3ZF , OSG60R040HF .
History: RSS130N03FU6TB | SI4418DY | IRFU010 | 2N6968 | HGW059N12SL | SI3879DV | HGW059N12S
Keywords - OSG60R030HTZF MOSFET datasheet
OSG60R030HTZF cross reference
OSG60R030HTZF equivalent finder
OSG60R030HTZF lookup
OSG60R030HTZF substitution
OSG60R030HTZF replacement
History: RSS130N03FU6TB | SI4418DY | IRFU010 | 2N6968 | HGW059N12SL | SI3879DV | HGW059N12S



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