All MOSFET. OSG60R030HTZF Datasheet

 

OSG60R030HTZF Datasheet and Replacement


   Type Designator: OSG60R030HTZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 91.5 nS
   Cossⓘ - Output Capacitance: 555 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO247
 

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OSG60R030HTZF Datasheet (PDF)

 ..1. Size:387K  oriental semi
osg60r030htzf.pdf pdf_icon

OSG60R030HTZF

OSG60R030HTZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 3.1. Size:948K  oriental semi
osg60r030ht3zf.pdf pdf_icon

OSG60R030HTZF

OSG60R030HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 4.1. Size:978K  oriental semi
osg60r030hzf.pdf pdf_icon

OSG60R030HTZF

OSG60R030HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 6.1. Size:962K  oriental semi
osg60r031hzf.pdf pdf_icon

OSG60R030HTZF

OSG60R031HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

Datasheet: OSG60R017HT3F , OSG60R018HT3ZF , OSG60R020HT3F , OSG60R022HT3ZF , OSG60R028HF , OSG60R028HT3F , OSG60R028HTF , OSG60R030HT3ZF , IRFB31N20D , OSG60R030HZF , OSG60R031HT3ZF , OSG60R031HZF , OSG60R035HF , OSG60R035HT5ZF , OSG60R035TT5ZF , OSG60R038HT3ZF , OSG60R040HF .

History: CEM6607 | BSC252N10NSF | PA002FMA | CEP3060 | 2N7002BKS | IRF7665S2TRPBF | AOB66613L

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