All MOSFET. OSG60R035TT5ZF Datasheet

 

OSG60R035TT5ZF Datasheet and Replacement


   Type Designator: OSG60R035TT5ZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 350 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 68 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 278 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TOLL
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OSG60R035TT5ZF Datasheet (PDF)

 ..1. Size:934K  oriental semi
osg60r035tt5zf.pdf pdf_icon

OSG60R035TT5ZF

OSG60R035TT5ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 5.1. Size:424K  oriental semi
osg60r035hf.pdf pdf_icon

OSG60R035TT5ZF

OSG60R035HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:954K  oriental semi
osg60r035ht5zf.pdf pdf_icon

OSG60R035TT5ZF

OSG60R035HT5ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 6.1. Size:387K  oriental semi
osg60r030htzf.pdf pdf_icon

OSG60R035TT5ZF

OSG60R030HTZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: G5N50K | HLML6401 | TSM3900DCX6 | VB1101M | SWP065R68E7T | STN3400 | AP85T03GH-HF

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