All MOSFET. OSG60R040HF Datasheet

 

OSG60R040HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: OSG60R040HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 480 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 78 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 102.9 nC
   trⓘ - Rise Time: 96.7 nS
   Cossⓘ - Output Capacitance: 306 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO247

 OSG60R040HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

OSG60R040HF Datasheet (PDF)

 ..1. Size:376K  oriental semi
osg60r040hf.pdf

OSG60R040HF
OSG60R040HF

OSG60R040HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 6.1. Size:376K  oriental semi
osg60r041hzf.pdf

OSG60R040HF
OSG60R040HF

OSG60R041HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 7.1. Size:1106K  1
osg60r074hzf osg60r074fzf.pdf

OSG60R040HF
OSG60R040HF

OSG60R074xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Ultra-fast and robust body diode PC power Low R & FOM Server power supply DS(on) Excellent low switching loss Telecom Excellent stability and uniformity Solar invertor Easy to drive Super charger for automobiles OSG60R074HZF, OSG60R074FZF , Enhanc

 7.2. Size:1006K  oriental semi
osg60r099pezf.pdf

OSG60R040HF
OSG60R040HF

 7.3. Size:885K  oriental semi
osg60r096hsf.pdf

OSG60R040HF
OSG60R040HF

 7.4. Size:924K  oriental semi
osg60r074hszf.pdf

OSG60R040HF
OSG60R040HF

OSG60R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 7.5. Size:390K  oriental semi
osg60r069hsf.pdf

OSG60R040HF
OSG60R040HF

OSG60R069HSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 7.6. Size:824K  oriental semi
osg60r060ht3f.pdf

OSG60R040HF
OSG60R040HF

OSG60R060HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 7.7. Size:1017K  oriental semi
osg60r074fzf.pdf

OSG60R040HF
OSG60R040HF

OSG60R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 7.8. Size:404K  oriental semi
osg60r092hsf.pdf

OSG60R040HF
OSG60R040HF

OSG60R092HSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 7.9. Size:942K  oriental semi
osg60r065jt3f.pdf

OSG60R040HF
OSG60R040HF

OSG60R065JT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 7.10. Size:387K  oriental semi
osg60r030htzf.pdf

OSG60R040HF
OSG60R040HF

OSG60R030HTZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 7.11. Size:395K  oriental semi
osg60r028htf.pdf

OSG60R040HF
OSG60R040HF

OSG60R028HTF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switc

 7.12. Size:905K  oriental semi
osg60r055tt3zf.pdf

OSG60R040HF
OSG60R040HF

OSG60R055TT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 7.13. Size:962K  oriental semi
osg60r031hzf.pdf

OSG60R040HF
OSG60R040HF

OSG60R031HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 7.14. Size:923K  oriental semi
osg60r074fszf.pdf

OSG60R040HF
OSG60R040HF

OSG60R074FSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 7.15. Size:935K  oriental semi
osg60r070ht3f.pdf

OSG60R040HF
OSG60R040HF

OSG60R070HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 7.16. Size:991K  oriental semi
osg60r070pt3zf.pdf

OSG60R040HF
OSG60R040HF

OSG60R070PT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 7.17. Size:379K  oriental semi
osg60r074hzf.pdf

OSG60R040HF
OSG60R040HF

OSG60R074HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 7.18. Size:934K  oriental semi
osg60r035tt5zf.pdf

OSG60R040HF
OSG60R040HF

OSG60R035TT5ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 7.19. Size:1085K  oriental semi
osg60r092hf.pdf

OSG60R040HF
OSG60R040HF

 7.20. Size:945K  oriental semi
osg60r099ht3f.pdf

OSG60R040HF
OSG60R040HF

 7.21. Size:414K  oriental semi
osg60r074kszf.pdf

OSG60R040HF
OSG60R040HF

OSG60R074KSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 7.22. Size:942K  oriental semi
osg60r060pt3f.pdf

OSG60R040HF
OSG60R040HF

OSG60R060PT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 7.23. Size:902K  oriental semi
osg60r099kt3f.pdf

OSG60R040HF
OSG60R040HF

 7.24. Size:330K  oriental semi
osg60r099kszf.pdf

OSG60R040HF
OSG60R040HF

OSG60R099KSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recove

 7.25. Size:409K  oriental semi
osg60r099hszf.pdf

OSG60R040HF
OSG60R040HF

OSG60R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 7.26. Size:957K  oriental semi
osg60r099ft3f.pdf

OSG60R040HF
OSG60R040HF

 7.27. Size:410K  oriental semi
osg60r099hf.pdf

OSG60R040HF
OSG60R040HF

OSG60R099HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 7.28. Size:386K  oriental semi
osg60r092ff.pdf

OSG60R040HF
OSG60R040HF

OSG60R092FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 7.29. Size:403K  oriental semi
osg60r070hsf.pdf

OSG60R040HF
OSG60R040HF

 7.30. Size:857K  oriental semi
osg60r096ksf.pdf

OSG60R040HF
OSG60R040HF

 7.31. Size:952K  oriental semi
osg60r028ht3f.pdf

OSG60R040HF
OSG60R040HF

OSG60R028HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 7.32. Size:378K  oriental semi
osg60r069hzf.pdf

OSG60R040HF
OSG60R040HF

OSG60R069HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 7.33. Size:375K  oriental semi
osg60r069hf.pdf

OSG60R040HF
OSG60R040HF

OSG60R069HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 7.34. Size:830K  oriental semi
osg60r096psf.pdf

OSG60R040HF
OSG60R040HF

 7.35. Size:914K  oriental semi
osg60r060hmf.pdf

OSG60R040HF
OSG60R040HF

OSG60R060HMF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. Features Low R & FOM DS(ON) Ultra-low Q rr

 7.36. Size:398K  oriental semi
osg60r070hf.pdf

OSG60R040HF
OSG60R040HF

OSG60R070HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 7.37. Size:424K  oriental semi
osg60r035hf.pdf

OSG60R040HF
OSG60R040HF

OSG60R035HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 7.38. Size:954K  oriental semi
osg60r035ht5zf.pdf

OSG60R040HF
OSG60R040HF

OSG60R035HT5ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 7.39. Size:934K  oriental semi
osg60r092ht3zf.pdf

OSG60R040HF
OSG60R040HF

 7.40. Size:415K  oriental semi
osg60r028hf.pdf

OSG60R040HF
OSG60R040HF

OSG60R028HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 7.41. Size:949K  oriental semi
osg60r055tt3f.pdf

OSG60R040HF
OSG60R040HF

OSG60R055TT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 7.42. Size:869K  oriental semi
osg60r075hszf.pdf

OSG60R040HF
OSG60R040HF

 7.43. Size:926K  oriental semi
osg60r060ht3zf.pdf

OSG60R040HF
OSG60R040HF

OSG60R060HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 7.44. Size:931K  oriental semi
osg60r070ht3zf.pdf

OSG60R040HF
OSG60R040HF

OSG60R070HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 7.45. Size:948K  oriental semi
osg60r030ht3zf.pdf

OSG60R040HF
OSG60R040HF

OSG60R030HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 7.46. Size:952K  oriental semi
osg60r022ht3zf.pdf

OSG60R040HF
OSG60R040HF

OSG60R022HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 7.47. Size:889K  oriental semi
osg60r060kt3zf.pdf

OSG60R040HF
OSG60R040HF

OSG60R060KT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 7.48. Size:992K  oriental semi
osg60r099fezf.pdf

OSG60R040HF
OSG60R040HF

 7.49. Size:960K  oriental semi
osg60r031ht3zf.pdf

OSG60R040HF
OSG60R040HF

OSG60R031HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 7.50. Size:978K  oriental semi
osg60r030hzf.pdf

OSG60R040HF
OSG60R040HF

OSG60R030HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 7.51. Size:967K  oriental semi
osg60r038ht3zf.pdf

OSG60R040HF
OSG60R040HF

OSG60R038HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 7.52. Size:964K  oriental semi
osg60r018ht3zf.pdf

OSG60R040HF
OSG60R040HF

OSG60R018HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 7.53. Size:921K  oriental semi
osg60r070kt3zf.pdf

OSG60R040HF
OSG60R040HF

OSG60R070KT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 7.54. Size:955K  oriental semi
osg60r017ht3f.pdf

OSG60R040HF
OSG60R040HF

OSG60R017HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 7.55. Size:978K  oriental semi
osg60r020ht3f.pdf

OSG60R040HF
OSG60R040HF

OSG60R020HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 7.56. Size:371K  oriental semi
osg60r099jf.pdf

OSG60R040HF
OSG60R040HF

OSG60R099JF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 7.57. Size:979K  oriental semi
osg60r092pt3zf.pdf

OSG60R040HF
OSG60R040HF

 7.58. Size:382K  oriental semi
osg60r070ff.pdf

OSG60R040HF
OSG60R040HF

OSG60R070FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 7.59. Size:844K  oriental semi
osg60r096fsf.pdf

OSG60R040HF
OSG60R040HF

 7.60. Size:980K  oriental semi
osg60r099hezf.pdf

OSG60R040HF
OSG60R040HF

 7.61. Size:1007K  oriental semi
osg60r099kezf.pdf

OSG60R040HF
OSG60R040HF

 7.62. Size:963K  oriental semi
osg60r074jt3zf.pdf

OSG60R040HF
OSG60R040HF

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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