OSG60R060HT3ZF Datasheet. Specs and Replacement

Type Designator: OSG60R060HT3ZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 440 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 88 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO247

OSG60R060HT3ZF substitution

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OSG60R060HT3ZF datasheet

 ..1. Size:926K  oriental semi
 osg60r060ht3zf.pdf pdf_icon

OSG60R060HT3ZF

OSG60R060HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d... See More ⇒

 2.1. Size:824K  oriental semi
 osg60r060ht3f.pdf pdf_icon

OSG60R060HT3ZF

OSG60R060HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit... See More ⇒

 4.1. Size:914K  oriental semi
 osg60r060hmf.pdf pdf_icon

OSG60R060HT3ZF

OSG60R060HMF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. Features Low R & FOM DS(ON) Ultra-low Q rr ... See More ⇒

 5.1. Size:942K  oriental semi
 osg60r060pt3f.pdf pdf_icon

OSG60R060HT3ZF

OSG60R060PT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit... See More ⇒

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Detailed specifications: OSG60R035TT5ZF, OSG60R038HT3ZF, OSG60R040HF, OSG60R041HZF, OSG60R055TT3F, OSG60R055TT3ZF, OSG60R060HMF, OSG60R060HT3F, IRF830, OSG60R060KT3ZF, OSG60R060PT3F, OSG60R065JT3F, OSG60R069HF, OSG60R069HSF, OSG60R069HZF, OSG60R070FF, OSG60R070HF

Keywords - OSG60R060HT3ZF MOSFET specs

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