All MOSFET. OSG60R065JT3F Datasheet

 

OSG60R065JT3F Datasheet and Replacement


   Type Designator: OSG60R065JT3F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 181 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39.2 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: PDFN8X8
 

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OSG60R065JT3F Datasheet (PDF)

 ..1. Size:942K  oriental semi
osg60r065jt3f.pdf pdf_icon

OSG60R065JT3F

OSG60R065JT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 6.1. Size:390K  oriental semi
osg60r069hsf.pdf pdf_icon

OSG60R065JT3F

OSG60R069HSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 6.2. Size:824K  oriental semi
osg60r060ht3f.pdf pdf_icon

OSG60R065JT3F

OSG60R060HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 6.3. Size:942K  oriental semi
osg60r060pt3f.pdf pdf_icon

OSG60R065JT3F

OSG60R060PT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

Datasheet: OSG60R041HZF , OSG60R055TT3F , OSG60R055TT3ZF , OSG60R060HMF , OSG60R060HT3F , OSG60R060HT3ZF , OSG60R060KT3ZF , OSG60R060PT3F , 8N60 , OSG60R069HF , OSG60R069HSF , OSG60R069HZF , OSG60R070FF , OSG60R070HF , OSG60R070HSF , OSG60R070HT3F , OSG60R070HT3ZF .

History: 2SK1403A | FDS7066N7 | PMV15ENEA | AON6974A | SM4802DSK | FTK2012 | OSG65R028HT3ZF

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