OSG60R065JT3F Datasheet and Replacement
Type Designator: OSG60R065JT3F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 181 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 48 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 39.2 nS
Cossⓘ - Output Capacitance: 145 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: PDFN8X8
OSG60R065JT3F substitution
OSG60R065JT3F Datasheet (PDF)
osg60r065jt3f.pdf

OSG60R065JT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit
osg60r069hsf.pdf

OSG60R069HSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara
osg60r060ht3f.pdf

OSG60R060HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit
osg60r060pt3f.pdf

OSG60R060PT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit
Datasheet: OSG60R041HZF , OSG60R055TT3F , OSG60R055TT3ZF , OSG60R060HMF , OSG60R060HT3F , OSG60R060HT3ZF , OSG60R060KT3ZF , OSG60R060PT3F , 8N60 , OSG60R069HF , OSG60R069HSF , OSG60R069HZF , OSG60R070FF , OSG60R070HF , OSG60R070HSF , OSG60R070HT3F , OSG60R070HT3ZF .
History: 2SK1403A | FDS7066N7 | PMV15ENEA | AON6974A | SM4802DSK | FTK2012 | OSG65R028HT3ZF
Keywords - OSG60R065JT3F MOSFET datasheet
OSG60R065JT3F cross reference
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OSG60R065JT3F replacement
History: 2SK1403A | FDS7066N7 | PMV15ENEA | AON6974A | SM4802DSK | FTK2012 | OSG65R028HT3ZF



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