All MOSFET. OSG60R069HF Datasheet

 

OSG60R069HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: OSG60R069HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 390 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 53 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60.5 nC
   trⓘ - Rise Time: 104.4 nS
   Cossⓘ - Output Capacitance: 283.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
   Package: TO247

 OSG60R069HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

OSG60R069HF Datasheet (PDF)

 ..1. Size:375K  oriental semi
osg60r069hf.pdf

OSG60R069HF
OSG60R069HF

OSG60R069HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 4.1. Size:390K  oriental semi
osg60r069hsf.pdf

OSG60R069HF
OSG60R069HF

OSG60R069HSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 4.2. Size:378K  oriental semi
osg60r069hzf.pdf

OSG60R069HF
OSG60R069HF

OSG60R069HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 6.1. Size:824K  oriental semi
osg60r060ht3f.pdf

OSG60R069HF
OSG60R069HF

OSG60R060HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 6.2. Size:942K  oriental semi
osg60r065jt3f.pdf

OSG60R069HF
OSG60R069HF

OSG60R065JT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 6.3. Size:942K  oriental semi
osg60r060pt3f.pdf

OSG60R069HF
OSG60R069HF

OSG60R060PT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 6.4. Size:914K  oriental semi
osg60r060hmf.pdf

OSG60R069HF
OSG60R069HF

OSG60R060HMF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. Features Low R & FOM DS(ON) Ultra-low Q rr

 6.5. Size:926K  oriental semi
osg60r060ht3zf.pdf

OSG60R069HF
OSG60R069HF

OSG60R060HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 6.6. Size:889K  oriental semi
osg60r060kt3zf.pdf

OSG60R069HF
OSG60R069HF

OSG60R060KT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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