STM6718
MOSFET. Datasheet pdf. Equivalent
Type Designator: STM6718
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 10
A
Qgⓘ - Total Gate Charge: 19
nC
Cossⓘ -
Output Capacitance: 235
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125
Ohm
Package:
SOP8
STM6718
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STM6718
Datasheet (PDF)
..1. Size:118K samhop
stm6718.pdf 
GreenProduct STM6718SamHop Microelectronics Corp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.12.5 @ VGS=10VSuface Mount Package.60V 10A18.5 @ VGS=4.5VSO-81(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Par
8.1. Size:118K samhop
stm6716.pdf
GreenProduct STM6716SamHop Microelectronics Corp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.12.5 @ VGS=10VSuface Mount Package.60V 10A16 @ VGS=4.5VSO-81(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Param
9.1. Size:120K samhop
stm6708.pdf
GreenProduct STM6708SamHop Microelectronics Corp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.10 @ VGS=10VSuface Mount Package.60V 15A13.5 @ VGS=4.5V SO-81ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)Symbol Param
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
