OSG60R069HZF Datasheet. Specs and Replacement
Type Designator: OSG60R069HZF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 390 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 53 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 114.4 nS
Cossⓘ - Output Capacitance: 283.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
Package: TO247
OSG60R069HZF substitution
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OSG60R069HZF datasheet
osg60r069hzf.pdf
OSG60R069HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio... See More ⇒
osg60r069hsf.pdf
OSG60R069HSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara... See More ⇒
osg60r069hf.pdf
OSG60R069HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒
osg60r060ht3f.pdf
OSG60R060HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit... See More ⇒
Detailed specifications: OSG60R060HMF, OSG60R060HT3F, OSG60R060HT3ZF, OSG60R060KT3ZF, OSG60R060PT3F, OSG60R065JT3F, OSG60R069HF, OSG60R069HSF, EMB04N03H, OSG60R070FF, OSG60R070HF, OSG60R070HSF, OSG60R070HT3F, OSG60R070HT3ZF, OSG60R070KT3ZF, OSG60R070PT3ZF, OSG60R074FSZF
Keywords - OSG60R069HZF MOSFET specs
OSG60R069HZF cross reference
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OSG60R069HZF substitution
OSG60R069HZF replacement
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History: IXFT50N60X
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