OSG60R069HZF Datasheet. Specs and Replacement

Type Designator: OSG60R069HZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 390 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 53 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 114.4 nS

Cossⓘ - Output Capacitance: 283.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm

Package: TO247

OSG60R069HZF substitution

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OSG60R069HZF datasheet

 ..1. Size:378K  oriental semi
osg60r069hzf.pdf pdf_icon

OSG60R069HZF

OSG60R069HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio... See More ⇒

 4.1. Size:390K  oriental semi
osg60r069hsf.pdf pdf_icon

OSG60R069HZF

OSG60R069HSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara... See More ⇒

 4.2. Size:375K  oriental semi
osg60r069hf.pdf pdf_icon

OSG60R069HZF

OSG60R069HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 6.1. Size:824K  oriental semi
osg60r060ht3f.pdf pdf_icon

OSG60R069HZF

OSG60R060HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit... See More ⇒

Detailed specifications: OSG60R060HMF, OSG60R060HT3F, OSG60R060HT3ZF, OSG60R060KT3ZF, OSG60R060PT3F, OSG60R065JT3F, OSG60R069HF, OSG60R069HSF, EMB04N03H, OSG60R070FF, OSG60R070HF, OSG60R070HSF, OSG60R070HT3F, OSG60R070HT3ZF, OSG60R070KT3ZF, OSG60R070PT3ZF, OSG60R074FSZF

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