All MOSFET. OSG60R070HT3F Datasheet

 

OSG60R070HT3F MOSFET. Datasheet pdf. Equivalent


   Type Designator: OSG60R070HT3F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 181 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 48 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55.5 nC
   trⓘ - Rise Time: 32.6 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO247

 OSG60R070HT3F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

OSG60R070HT3F Datasheet (PDF)

 ..1. Size:935K  oriental semi
 osg60r070ht3f.pdf

OSG60R070HT3F OSG60R070HT3F

OSG60R070HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 2.1. Size:931K  oriental semi
 osg60r070ht3zf.pdf

OSG60R070HT3F OSG60R070HT3F

OSG60R070HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 4.1. Size:403K  oriental semi
 osg60r070hsf.pdf

OSG60R070HT3F OSG60R070HT3F

 4.2. Size:398K  oriental semi
 osg60r070hf.pdf

OSG60R070HT3F OSG60R070HT3F

OSG60R070HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PHB36N06E | STH65N06FI | 2SK1285 | AM1960NE

 

 
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