2SK2710 Specs and Replacement
Type Designator: 2SK2710
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ -
Output Capacitance: 410 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: TO3PF
FM100
- MOSFET ⓘ Cross-Reference Search
2SK2710 datasheet
..1. Size:42K 1
2sk2710.pdf 
2SK2710 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 600 V I = 100 A, V = 0V (BR) DSS D GS V 600 V DSS I 100 nA V = 30V GSS GS V 30 V GSS I 100 A V = 600V, V = 0V DSS DS GS I 12 A D V 2.0 3.0 4.0 V V = 10V, I = 1mA TH DS D I 48... See More ⇒
8.1. Size:409K toshiba
2sk2717.pdf
2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2717 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 2.3 (typ.) (ON) High forward transfer admittance Y = 4.4 S (typ.) fs Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1 ... See More ⇒
8.3. Size:411K toshiba
2sk2718.pdf
2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2718 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 5.6 (typ.) (ON) High forward transfer admittance Y = 2.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1 ... See More ⇒
8.4. Size:144K rohm
2sk2714.pdf
Transistors Switching (500V, 10A) 2SK2714 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 1... See More ⇒
8.6. Size:143K rohm
2sk2713.pdf
Transistors Switching (450V, 5A) 2SK2713 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 13... See More ⇒
8.7. Size:138K rohm
2sk2715.pdf
Transistors Switching (500V, 2A) 2SK2715 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specificati... See More ⇒
8.10. Size:145K rohm
2sk2715tl.pdf
Transistors Switching (500V, 2A) 2SK2715 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specificati... See More ⇒
8.11. Size:139K rohm
2sk2711.pdf
Transistors Switching (250V, 16A) 2SK2711 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specificat... See More ⇒
8.13. Size:925K cn vbsemi
2sk2715.pdf
2SK2715 www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS di... See More ⇒
Detailed specifications: 2SK2702, 2SK2703, 2SK2704, 2SK2705, 2SK2706, 2SK2707, 2SK2708, 2SK2709, P55NF06, 2SK2723, 2SK2724, 2SK2734, 2SK2735, 2SK2736, 2SK2737, 2SK2738, 2SK2753-01
Keywords - 2SK2710 MOSFET specs
2SK2710 cross reference
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2SK2710 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
