All MOSFET. FDMS8027S Datasheet

 

FDMS8027S Datasheet and Replacement


   Type Designator: FDMS8027S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: POWER56
 

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FDMS8027S Datasheet (PDF)

 ..1. Size:286K  fairchild semi
fdms8027s.pdf pdf_icon

FDMS8027S

August 2010FDMS8027SN-Channel PowerTrench SyncFETTM 30 V, 22 A, 5.0 mFeatures General DescriptionThe FDMS8027S has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 Apackage technologies have been combined to offer the lowest Adv

 7.1. Size:289K  fairchild semi
fdms8026s.pdf pdf_icon

FDMS8027S

August 2010FDMS8026SN-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 mFeatures General DescriptionThe FDMS8026S has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 Apackage technologies have been combined to offer the lowest Adv

 7.2. Size:281K  fairchild semi
fdms8025s.pdf pdf_icon

FDMS8027S

August 2010FDMS8025SN-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.8 mFeatures General DescriptionThe FDMS8025S has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 Apackage technologies have been combined to offer the lowest rDS(

 7.3. Size:258K  fairchild semi
fdms8020.pdf pdf_icon

FDMS8027S

November 2011FDMS8020N-Channel PowerTrench MOSFET 30 V, 42 A, 2.5 mFeatures General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 26 AThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.6 m at VGS = 4.5 V, ID = 21.5 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced P

Datasheet: FDMS7700S , STM6914 , FDMS8023S , STM6913A , FDMS8025S , STM6912 , FDMS8026S , STM6718 , IRFP260 , STM6716 , FDMS8460 , FDMS86101 , STM6708 , FDMS86102LZ , STM6610 , FDMS86103L , STM6375 .

History: IXTH15N60 | WSP6064 | FDMS8460 | SML80B12

Keywords - FDMS8027S MOSFET datasheet

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