OSG60R092HSF Datasheet and Replacement
Type Designator: OSG60R092HSF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 52.7 nS
Cossⓘ - Output Capacitance: 213.1 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm
Package: TO247
OSG60R092HSF substitution
OSG60R092HSF Datasheet (PDF)
osg60r092hsf.pdf
OSG60R092HSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara
osg60r092ff.pdf
OSG60R092FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
Datasheet: OSG60R070PT3ZF , OSG60R074FSZF , OSG60R074HSZF , OSG60R074JT3ZF , OSG60R074KSZF , OSG60R075HSZF , OSG60R092FF , OSG60R092HF , IRF540 , OSG60R092HT3ZF , OSG60R092PT3ZF , OSG60R096FSF , OSG60R096HSF , OSG60R096KSF , OSG60R096PSF , OSG60R099FEZF , OSG60R099FT3F .
History: OSG60R070KT3ZF | OSG60R092HT3ZF | PJA3415 | CS6N60A4D
Keywords - OSG60R092HSF MOSFET datasheet
OSG60R092HSF cross reference
OSG60R092HSF equivalent finder
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OSG60R092HSF substitution
OSG60R092HSF replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: OSG60R070KT3ZF | OSG60R092HT3ZF | PJA3415 | CS6N60A4D
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