All MOSFET. OSG60R092HSF Datasheet

 

OSG60R092HSF Datasheet and Replacement


   Type Designator: OSG60R092HSF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 52.7 nS
   Cossⓘ - Output Capacitance: 213.1 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm
   Package: TO247
 

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OSG60R092HSF Datasheet (PDF)

 ..1. Size:404K  oriental semi
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OSG60R092HSF

OSG60R092HSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 4.1. Size:1085K  oriental semi
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OSG60R092HSF

 4.2. Size:934K  oriental semi
 osg60r092ht3zf.pdf pdf_icon

OSG60R092HSF

 5.1. Size:386K  oriental semi
 osg60r092ff.pdf pdf_icon

OSG60R092HSF

OSG60R092FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

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Datasheet: OSG60R070PT3ZF , OSG60R074FSZF , OSG60R074HSZF , OSG60R074JT3ZF , OSG60R074KSZF , OSG60R075HSZF , OSG60R092FF , OSG60R092HF , IRF540N , OSG60R092HT3ZF , OSG60R092PT3ZF , OSG60R096FSF , OSG60R096HSF , OSG60R096KSF , OSG60R096PSF , OSG60R099FEZF , OSG60R099FT3F .

History: FQI13N06LTU | SSF3365 | NX3008PBKV | APT94N65LC6 | AP9979GH-HF | HTJ650P02 | SUM110N04-2M3L

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