All MOSFET. OSG60R092HT3ZF Datasheet

 

OSG60R092HT3ZF Datasheet and Replacement


   Type Designator: OSG60R092HT3ZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 58.6 nS
   Cossⓘ - Output Capacitance: 154 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm
   Package: TO247
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OSG60R092HT3ZF Datasheet (PDF)

 ..1. Size:934K  oriental semi
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OSG60R092HT3ZF

 4.1. Size:404K  oriental semi
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OSG60R092HT3ZF

OSG60R092HSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 4.2. Size:1085K  oriental semi
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OSG60R092HT3ZF

 5.1. Size:386K  oriental semi
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OSG60R092HT3ZF

OSG60R092FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SPA22N65G | SM4186T9RL | APT10021JFLL | NP180N04TUJ | WMM07N65C4 | ZVN4210GTC | TPCA8047-H

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