OSG60R092HT3ZF Datasheet and Replacement
Type Designator: OSG60R092HT3ZF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 58.6 nS
Cossⓘ - Output Capacitance: 154 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm
Package: TO247
OSG60R092HT3ZF substitution
OSG60R092HT3ZF Datasheet (PDF)
osg60r092hsf.pdf

OSG60R092HSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara
osg60r092ff.pdf

OSG60R092FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
Datasheet: OSG60R074FSZF , OSG60R074HSZF , OSG60R074JT3ZF , OSG60R074KSZF , OSG60R075HSZF , OSG60R092FF , OSG60R092HF , OSG60R092HSF , 50N06 , OSG60R092PT3ZF , OSG60R096FSF , OSG60R096HSF , OSG60R096KSF , OSG60R096PSF , OSG60R099FEZF , OSG60R099FT3F , OSG60R099HEZF .
History: TPW65R135MFD | SI1958DH | QM6014D | AUIRFS6535 | HGB320N20S | TPCA8047-H | AFP2367AS
Keywords - OSG60R092HT3ZF MOSFET datasheet
OSG60R092HT3ZF cross reference
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OSG60R092HT3ZF substitution
OSG60R092HT3ZF replacement
History: TPW65R135MFD | SI1958DH | QM6014D | AUIRFS6535 | HGB320N20S | TPCA8047-H | AFP2367AS



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