OSG60R099HEZF Datasheet. Specs and Replacement
Type Designator: OSG60R099HEZF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 261 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29.4 nS
Cossⓘ - Output Capacitance: 223.8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO247
OSG60R099HEZF substitution
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OSG60R099HEZF datasheet
osg60r099hszf.pdf
OSG60R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di... See More ⇒
osg60r099hf.pdf
OSG60R099HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒
Detailed specifications: OSG60R092HT3ZF, OSG60R092PT3ZF, OSG60R096FSF, OSG60R096HSF, OSG60R096KSF, OSG60R096PSF, OSG60R099FEZF, OSG60R099FT3F, IRFP260N, OSG60R099HF, OSG60R099HSZF, OSG60R099HT3F, OSG60R099JF, OSG60R099KEZF, OSG60R099KSZF, OSG60R099KT3F, OSG60R099PEZF
Keywords - OSG60R099HEZF MOSFET specs
OSG60R099HEZF cross reference
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OSG60R099HEZF substitution
OSG60R099HEZF replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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