OSG60R099HSZF Datasheet and Replacement
Type Designator: OSG60R099HSZF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 77 nS
Cossⓘ - Output Capacitance: 203.3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO247
OSG60R099HSZF substitution
OSG60R099HSZF Datasheet (PDF)
osg60r099hszf.pdf
OSG60R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di
osg60r099hf.pdf
OSG60R099HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
Datasheet: OSG60R096FSF , OSG60R096HSF , OSG60R096KSF , OSG60R096PSF , OSG60R099FEZF , OSG60R099FT3F , OSG60R099HEZF , OSG60R099HF , IRFB4227 , OSG60R099HT3F , OSG60R099JF , OSG60R099KEZF , OSG60R099KSZF , OSG60R099KT3F , OSG60R099PEZF , OSG60R108FZF , OSG60R108HSZF .
History: PSMN1R9-25YLC | OSG60R069HZF | IRFI550A | AM30N06-39IE | PSMN1R7-30YL | CS6766 | CS6769
Keywords - OSG60R099HSZF MOSFET datasheet
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OSG60R099HSZF replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: PSMN1R9-25YLC | OSG60R069HZF | IRFI550A | AM30N06-39IE | PSMN1R7-30YL | CS6766 | CS6769
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