OSG60R099HSZF Datasheet and Replacement
Type Designator: OSG60R099HSZF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 36 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 77 nS
Cossⓘ - Output Capacitance: 203.3 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO247
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OSG60R099HSZF Datasheet (PDF)
osg60r099hszf.pdf

OSG60R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di
osg60r099hf.pdf

OSG60R099HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: BRCS035N04SDP | FQB6N50 | AP15TN1R5N | PJM2302NSA-S | MTP8N50E | BF989S | IPI80N06S2L-05
Keywords - OSG60R099HSZF MOSFET datasheet
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History: BRCS035N04SDP | FQB6N50 | AP15TN1R5N | PJM2302NSA-S | MTP8N50E | BF989S | IPI80N06S2L-05



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