All MOSFET. OSG60R099HSZF Datasheet

 

OSG60R099HSZF Datasheet and Replacement


   Type Designator: OSG60R099HSZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 203.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO247
 

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OSG60R099HSZF Datasheet (PDF)

 ..1. Size:409K  oriental semi
 osg60r099hszf.pdf pdf_icon

OSG60R099HSZF

OSG60R099HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 4.1. Size:945K  oriental semi
 osg60r099ht3f.pdf pdf_icon

OSG60R099HSZF

 4.2. Size:410K  oriental semi
 osg60r099hf.pdf pdf_icon

OSG60R099HSZF

OSG60R099HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 4.3. Size:980K  oriental semi
 osg60r099hezf.pdf pdf_icon

OSG60R099HSZF

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Datasheet: OSG60R096FSF , OSG60R096HSF , OSG60R096KSF , OSG60R096PSF , OSG60R099FEZF , OSG60R099FT3F , OSG60R099HEZF , OSG60R099HF , AON6414A , OSG60R099HT3F , OSG60R099JF , OSG60R099KEZF , OSG60R099KSZF , OSG60R099KT3F , OSG60R099PEZF , OSG60R108FZF , OSG60R108HSZF .

History: MTP8N50E | BSC040N10NS5 | HM5001 | STW31N65M5 | BSZ035N03MSG | APM4012NU | BUK9Y07-30B

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