OSG60R108HT3ZF Datasheet. Specs and Replacement
Type Designator: OSG60R108HT3ZF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 231 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 134 nS
Cossⓘ - Output Capacitance: 121 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm
Package: TO247
OSG60R108HT3ZF substitution
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OSG60R108HT3ZF datasheet
Detailed specifications: OSG60R099HT3F, OSG60R099JF, OSG60R099KEZF, OSG60R099KSZF, OSG60R099KT3F, OSG60R099PEZF, OSG60R108FZF, OSG60R108HSZF, IRFP250N, OSG60R108HZF, OSG60R108JZF, OSG60R108KSZF, OSG60R108KZF, OSG60R108PZF, OSG60R140FSZF, OSG60R150FF, OSG60R150HF
Keywords - OSG60R108HT3ZF MOSFET specs
OSG60R108HT3ZF cross reference
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OSG60R108HT3ZF substitution
OSG60R108HT3ZF replacement
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