OSG60R108HT3ZF Datasheet and Replacement
Type Designator: OSG60R108HT3ZF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 231 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 134 nS
Cossⓘ - Output Capacitance: 121 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.108 Ohm
Package: TO247
OSG60R108HT3ZF substitution
OSG60R108HT3ZF Datasheet (PDF)
Datasheet: OSG60R099HT3F , OSG60R099JF , OSG60R099KEZF , OSG60R099KSZF , OSG60R099KT3F , OSG60R099PEZF , OSG60R108FZF , OSG60R108HSZF , IRFP250N , OSG60R108HZF , OSG60R108JZF , OSG60R108KSZF , OSG60R108KZF , OSG60R108PZF , OSG60R140FSZF , OSG60R150FF , OSG60R150HF .
History: CS634F | AP94T07GP1-HF
Keywords - OSG60R108HT3ZF MOSFET datasheet
OSG60R108HT3ZF cross reference
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OSG60R108HT3ZF substitution
OSG60R108HT3ZF replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: CS634F | AP94T07GP1-HF
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