FDMS86101 PDF and Equivalents Search

 

FDMS86101 Specs and Replacement

Type Designator: FDMS86101

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: POWER56

FDMS86101 substitution

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FDMS86101 datasheet

 ..1. Size:480K  1
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FDMS86101

MOSFET - N Channel, POWERTRENCH) 100 V, 60 A, 8 mW FDMS86101 General Description This N-Channel MOSFET is produced using ON Semiconductor s www.onsemi.com advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S D Features D S Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A Max... See More ⇒

 ..2. Size:278K  fairchild semi
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FDMS86101

October 2010 FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 13.5 m at VGS = 6 V, ID = 9.5 A been especially tailored to minimize the on-state resistance and Advanced P... See More ⇒

 ..3. Size:548K  onsemi
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FDMS86101

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.1. Size:317K  fairchild semi
fdms86101a.pdf pdf_icon

FDMS86101

October 2014 FDMS86101A N-Channel Shielded Gate PowerTrench MOSFET 100 V, 60 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A incorporates Shielded Gate technology. This process has been optimized for the on-stat... See More ⇒

Detailed specifications: STM6913A, FDMS8025S, STM6912, FDMS8026S, STM6718, FDMS8027S, STM6716, FDMS8460, IRF9540N, STM6708, FDMS86102LZ, STM6610, FDMS86103L, STM6375, FDMS86104, STM4973, FDMS86105

Keywords - FDMS86101 MOSFET specs

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