OSG60R150KF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG60R150KF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   Rise Time (tr): 25.2 nS
   Drain-Source Capacitance (Cd): 155 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm
   Package: TO263

OSG60R150KF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

OSG60R150KF Datasheet (PDF)

..1. Size:831K oriental semi
osg60r150kf.pdf

OSG60R150KF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

5.1. Size:970K oriental semi
osg60r150jf.pdf