OSG60R150KF Datasheet. Specs and Replacement
Type Designator: OSG60R150KF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25.2 nS
Cossⓘ - Output Capacitance: 155 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO263
OSG60R150KF substitution
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OSG60R150KF datasheet
osg60r150kf.pdf
OSG60R150KF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒
Detailed specifications: OSG60R108JZF, OSG60R108KSZF, OSG60R108KZF, OSG60R108PZF, OSG60R140FSZF, OSG60R150FF, OSG60R150HF, OSG60R150JF, AO3401, OSG60R150PF, OSG60R180DT3F, OSG60R180FSF-NB, OSG60R180FT3F, OSG60R180HF, OSG60R180IF, OSG60R180KF, OSG60R180PF
Keywords - OSG60R150KF MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: OSG60R180DT3F | RFH25P08
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