OSG60R150PF Datasheet. Specs and Replacement

Type Designator: OSG60R150PF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 151 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25.2 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO220

OSG60R150PF substitution

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OSG60R150PF datasheet

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OSG60R150PF

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 5.1. Size:831K  oriental semi
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OSG60R150PF

OSG60R150KF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.2. Size:970K  oriental semi
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OSG60R150PF

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 5.3. Size:1018K  oriental semi
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Detailed specifications: OSG60R108KSZF, OSG60R108KZF, OSG60R108PZF, OSG60R140FSZF, OSG60R150FF, OSG60R150HF, OSG60R150JF, OSG60R150KF, K3569, OSG60R180DT3F, OSG60R180FSF-NB, OSG60R180FT3F, OSG60R180HF, OSG60R180IF, OSG60R180KF, OSG60R180PF, OSG60R190DT3ZF

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