OSG60R180FT3F MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG60R180FT3F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220F
OSG60R180FT3F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG60R180FT3F Datasheet (PDF)
4.4. Size:1016K oriental semi
osg60r180psf osg60r180fsf osg60r180isf osg60r180hsf osg60r180ksf.pdf
osg60r180psf osg60r180fsf osg60r180isf osg60r180hsf osg60r180ksf.pdf
OSG60R180xSF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG60R180PSF/FSF/ISF/HSF/KSF , Enhancement Mode N-Channel Power MOSFET General Description OSG60
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: R6011KNX
