OSG60R190DT3ZF Datasheet. Specs and Replacement

Type Designator: OSG60R190DT3ZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 186 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41.4 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO252

OSG60R190DT3ZF substitution

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OSG60R190DT3ZF datasheet

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Detailed specifications: OSG60R150PF, OSG60R180DT3F, OSG60R180FSF-NB, OSG60R180FT3F, OSG60R180HF, OSG60R180IF, OSG60R180KF, OSG60R180PF, 12N60, OSG60R190DTF, OSG60R190FSZF, OSG60R190FT3ZF, OSG60R1K2AF, OSG60R1K2DF, OSG60R1K2FF, OSG60R1K2PF, OSG60R1K8AF

Keywords - OSG60R190DT3ZF MOSFET specs

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