All MOSFET. OSG60R1K2PF Datasheet

 

OSG60R1K2PF Datasheet and Replacement


   Type Designator: OSG60R1K2PF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18.4 nS
   Cossⓘ - Output Capacitance: 21.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220
 

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OSG60R1K2PF Datasheet (PDF)

 ..1. Size:1032K  oriental semi
 osg60r1k2pf.pdf pdf_icon

OSG60R1K2PF

OSG60R1K2PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:1000K  oriental semi
 osg60r1k2ff.pdf pdf_icon

OSG60R1K2PF

OSG60R1K2FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:405K  oriental semi
 osg60r1k2df.pdf pdf_icon

OSG60R1K2PF

OSG60R1K2DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:371K  oriental semi
 osg60r1k2af.pdf pdf_icon

OSG60R1K2PF

OSG60R1K2AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

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Datasheet: OSG60R180PF , OSG60R190DT3ZF , OSG60R190DTF , OSG60R190FSZF , OSG60R190FT3ZF , OSG60R1K2AF , OSG60R1K2DF , OSG60R1K2FF , IRFP450 , OSG60R1K8AF , OSG60R1K8DF , OSG60R1K8FF , OSG60R1K8PF , OSG60R200FSZF , OSG60R200JSZF , OSG60R200PSZF , OSG60R260AF .

History: PUM6K31N | SI1424EDH | DADMI056N090Z1B | MSD23N22 | NTLUS3A18PZTBG | NTMFD5C680NL | ELM34404AA

Keywords - OSG60R1K2PF MOSFET datasheet

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