OSG60R1K2PF MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG60R1K2PF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 28.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.8 nC
trⓘ - Rise Time: 18.4 nS
Cossⓘ - Output Capacitance: 21.3 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220
OSG60R1K2PF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG60R1K2PF Datasheet (PDF)
osg60r1k2pf.pdf
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OSG60R1K2PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg60r1k2ff.pdf
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OSG60R1K2FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg60r1k2df.pdf
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OSG60R1K2DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg60r1k2af.pdf
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OSG60R1K2AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![OSG60R1K2PF](https://alltransistors.com/images/us.png)
![OSG60R1K2PF](https://alltransistors.com/images/es.png)
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