All MOSFET. OSG60R1K8FF Datasheet

 

OSG60R1K8FF Datasheet and Replacement


   Type Designator: OSG60R1K8FF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.6 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO220F
 

 OSG60R1K8FF substitution

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OSG60R1K8FF Datasheet (PDF)

 ..1. Size:399K  oriental semi
 osg60r1k8ff.pdf pdf_icon

OSG60R1K8FF

OSG60R1K8FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:380K  oriental semi
 osg60r1k8af.pdf pdf_icon

OSG60R1K8FF

OSG60R1K8AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:414K  oriental semi
 osg60r1k8df.pdf pdf_icon

OSG60R1K8FF

OSG60R1K8DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:984K  oriental semi
 osg60r1k8pf.pdf pdf_icon

OSG60R1K8FF

OSG60R1K8PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

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Datasheet: OSG60R190FSZF , OSG60R190FT3ZF , OSG60R1K2AF , OSG60R1K2DF , OSG60R1K2FF , OSG60R1K2PF , OSG60R1K8AF , OSG60R1K8DF , IRF1407 , OSG60R1K8PF , OSG60R200FSZF , OSG60R200JSZF , OSG60R200PSZF , OSG60R260AF , OSG60R260DF , OSG60R260FF , EMP21N03HC .

History: PHM18NQ15T | IPP60R600E6

Keywords - OSG60R1K8FF MOSFET datasheet

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