All MOSFET. OSG60R2K2ASF Datasheet

 

OSG60R2K2ASF MOSFET. Datasheet pdf. Equivalent


   Type Designator: OSG60R2K2ASF
   Marking Code: OSG60R2K2AS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.8 nC
   trⓘ - Rise Time: 16.8 nS
   Cossⓘ - Output Capacitance: 19.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO251

 OSG60R2K2ASF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

OSG60R2K2ASF Datasheet (PDF)

 ..1. Size:374K  oriental semi
 osg60r2k2asf.pdf

OSG60R2K2ASF OSG60R2K2ASF

OSG60R2K2ASF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 4.1. Size:950K  oriental semi
 osg60r2k2af.pdf

OSG60R2K2ASF OSG60R2K2ASF

OSG60R2K2AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:401K  oriental semi
 osg60r2k2dsf.pdf

OSG60R2K2ASF OSG60R2K2ASF

OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 5.2. Size:980K  oriental semi
 osg60r2k2df.pdf

OSG60R2K2ASF OSG60R2K2ASF

OSG60R2K2DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:393K  oriental semi
 osg60r2k2fsf.pdf

OSG60R2K2ASF OSG60R2K2ASF

OSG60R2K2FSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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