All MOSFET. OSG60R2K2DSF Datasheet

 

OSG60R2K2DSF Datasheet and Replacement


   Type Designator: OSG60R2K2DSF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16.8 nS
   Cossⓘ - Output Capacitance: 19.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO252
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OSG60R2K2DSF Datasheet (PDF)

 ..1. Size:401K  oriental semi
 osg60r2k2dsf.pdf pdf_icon

OSG60R2K2DSF

OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 4.1. Size:980K  oriental semi
 osg60r2k2df.pdf pdf_icon

OSG60R2K2DSF

OSG60R2K2DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:393K  oriental semi
 osg60r2k2fsf.pdf pdf_icon

OSG60R2K2DSF

OSG60R2K2FSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 5.2. Size:950K  oriental semi
 osg60r2k2af.pdf pdf_icon

OSG60R2K2DSF

OSG60R2K2AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

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History: STT812A | IRLS4030 | YTF541 | 2SK4108 | FDD390N15A | RJK1525DPP-M0 | DMNH10H028SCT

Keywords - OSG60R2K2DSF MOSFET datasheet

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