OSG60R2K8AF Datasheet. Specs and Replacement

Type Designator: OSG60R2K8AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 18.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.1 nS

Cossⓘ - Output Capacitance: 10.28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO251

OSG60R2K8AF substitution

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OSG60R2K8AF datasheet

 ..1. Size:373K  oriental semi
 osg60r2k8af.pdf pdf_icon

OSG60R2K8AF

OSG60R2K8AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 5.1. Size:372K  oriental semi
 osg60r2k8df.pdf pdf_icon

OSG60R2K8AF

OSG60R2K8DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 6.1. Size:401K  oriental semi
 osg60r2k2dsf.pdf pdf_icon

OSG60R2K8AF

OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara... See More ⇒

 6.2. Size:980K  oriental semi
 osg60r2k2df.pdf pdf_icon

OSG60R2K8AF

OSG60R2K2DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

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Detailed specifications: EMP21N03HC, OSG60R260IF, OSG60R260PF, OSG60R2K2AF, OSG60R2K2ASF, OSG60R2K2DF, OSG60R2K2DSF, OSG60R2K2FSF, IRF2807, OSG60R2K8DF, OSG60R320FT3ZF, OSG60R340DT3F, OSG60R340FT3F, OSG60R360DSF, OSG60R360DZF, OSG60R360FSF, OSG60R380AF

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