OSG60R580AF Datasheet. Specs and Replacement

Type Designator: OSG60R580AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 38.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO251

OSG60R580AF substitution

- MOSFET ⓘ Cross-Reference Search

 

OSG60R580AF datasheet

 ..1. Size:1016K  oriental semi
 osg60r580af.pdf pdf_icon

OSG60R580AF

... See More ⇒

 5.1. Size:937K  oriental semi
 osg60r580dtf.pdf pdf_icon

OSG60R580AF

... See More ⇒

 5.2. Size:1004K  oriental semi
 osg60r580pf.pdf pdf_icon

OSG60R580AF

... See More ⇒

 5.3. Size:1032K  oriental semi
 osg60r580ff.pdf pdf_icon

OSG60R580AF

... See More ⇒

SHOW MORE

Detailed specifications: OSG60R360DZF, OSG60R360FSF, OSG60R380AF, OSG60R380DF, OSG60R380DTF, OSG60R380FF, OSG60R380IF, OSG60R380PF, IRF830, OSG60R580DF, OSG60R580DT3F, OSG60R580DTF, OSG60R580FF, OSG60R580PF, OSG60R600DMZF, OSG60R670AF, OSG60R670DF

Keywords - OSG60R580AF MOSFET specs

 OSG60R580AF cross reference

 OSG60R580AF equivalent finder

 OSG60R580AF pdf lookup

 OSG60R580AF substitution

 OSG60R580AF replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs