OSG60R580FF Datasheet. Specs and Replacement

Type Designator: OSG60R580FF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 38.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO220F

OSG60R580FF substitution

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OSG60R580FF datasheet

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OSG60R580FF

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 5.1. Size:937K  oriental semi
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 5.2. Size:1016K  oriental semi
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Detailed specifications: OSG60R380DTF, OSG60R380FF, OSG60R380IF, OSG60R380PF, OSG60R580AF, OSG60R580DF, OSG60R580DT3F, OSG60R580DTF, AON7403, OSG60R580PF, OSG60R600DMZF, OSG60R670AF, OSG60R670DF, OSG60R670FF, OSG60R670PF, OSG60R900AF, OSG60R900DF

Keywords - OSG60R580FF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs