OSG65R017HT3F MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG65R017HT3F
Marking Code: OSG65R017HT3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 556 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 116 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 176 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 542 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO247
OSG65R017HT3F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG65R017HT3F Datasheet (PDF)
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
