OSG65R017HT3F Datasheet. Specs and Replacement

Type Designator: OSG65R017HT3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 556 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 116 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 542 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO247

OSG65R017HT3F substitution

- MOSFET ⓘ Cross-Reference Search

 

OSG65R017HT3F datasheet

 ..1. Size:964K  oriental semi
 osg65r017ht3f.pdf pdf_icon

OSG65R017HT3F

... See More ⇒

 7.1. Size:1055K  oriental semi
 osg65r042hf.pdf pdf_icon

OSG65R017HT3F

... See More ⇒

 7.2. Size:1051K  oriental semi
 osg65r069hf.pdf pdf_icon

OSG65R017HT3F

... See More ⇒

 7.3. Size:1061K  oriental semi
 osg65r035hzf.pdf pdf_icon

OSG65R017HT3F

... See More ⇒

SHOW MORE

Detailed specifications: OSG60R670AF, OSG60R670DF, OSG60R670FF, OSG60R670PF, OSG60R900AF, OSG60R900DF, OSG60R900FF, OSG60R900PF, IRFZ44N, OSG65R020HT3F, OSG65R022H4T3ZF, OSG65R028H4T3ZF, OSG65R028HF, OSG65R028HT3ZF, OSG65R035HF, OSG65R035HTF, OSG65R035HZF

Keywords - OSG65R017HT3F MOSFET specs

 OSG65R017HT3F cross reference

 OSG65R017HT3F equivalent finder

 OSG65R017HT3F pdf lookup

 OSG65R017HT3F substitution

 OSG65R017HT3F replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.