OSG65R038HTZF Datasheet. Specs and Replacement

Type Designator: OSG65R038HTZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 450 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69.2 nS

Cossⓘ - Output Capacitance: 399.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: TO247

OSG65R038HTZF substitution

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OSG65R038HTZF datasheet

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Detailed specifications: OSG65R022H4T3ZF, OSG65R028H4T3ZF, OSG65R028HF, OSG65R028HT3ZF, OSG65R035HF, OSG65R035HTF, OSG65R035HZF, OSG65R038H4ZF, IRF640, OSG65R038HZF, OSG65R040HT3F, OSG65R041HT3ZF, OSG65R041HZF, OSG65R042HF, OSG65R069H4SZF, OSG65R069HF, OSG65R069HSF

Keywords - OSG65R038HTZF MOSFET specs

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