OSG65R040HT3F Datasheet. Specs and Replacement

Type Designator: OSG65R040HT3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 390 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 78 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 254 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO247

OSG65R040HT3F substitution

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OSG65R040HT3F datasheet

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 6.1. Size:1055K  oriental semi
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 6.3. Size:1059K  oriental semi
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Detailed specifications: OSG65R028HF, OSG65R028HT3ZF, OSG65R035HF, OSG65R035HTF, OSG65R035HZF, OSG65R038H4ZF, OSG65R038HTZF, OSG65R038HZF, IRLZ44N, OSG65R041HT3ZF, OSG65R041HZF, OSG65R042HF, OSG65R069H4SZF, OSG65R069HF, OSG65R069HSF, OSG65R069HSZF, OSG65R069HZF

Keywords - OSG65R040HT3F MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.