OSG65R041HZF Datasheet. Specs and Replacement

Type Designator: OSG65R041HZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 78 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 119 nS

Cossⓘ - Output Capacitance: 444.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: TO247

OSG65R041HZF substitution

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OSG65R041HZF datasheet

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 4.1. Size:990K  oriental semi
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 6.1. Size:1055K  oriental semi
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 6.2. Size:960K  oriental semi
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Detailed specifications: OSG65R035HF, OSG65R035HTF, OSG65R035HZF, OSG65R038H4ZF, OSG65R038HTZF, OSG65R038HZF, OSG65R040HT3F, OSG65R041HT3ZF, IRF640N, OSG65R042HF, OSG65R069H4SZF, OSG65R069HF, OSG65R069HSF, OSG65R069HSZF, OSG65R069HZF, OSG65R070FT3F, OSG65R070HT3F

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