OSG65R069HSZF MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG65R069HSZF
Marking Code: OSG65R069HSZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 390 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 53 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 108 nC
trⓘ - Rise Time: 88.2 nS
Cossⓘ - Output Capacitance: 293.2 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
Package: TO247
OSG65R069HSZF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG65R069HSZF Datasheet (PDF)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SIHLR014 | 2SK2544 | GSM9971B | PMV32UP | SRK7002LT1 | KF7N50D | AP04N70BI-HF
History: SIHLR014 | 2SK2544 | GSM9971B | PMV32UP | SRK7002LT1 | KF7N50D | AP04N70BI-HF
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918