OSG65R069HSZF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG65R069HSZF
   Marking Code: OSG65R069HSZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 390 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 53 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 108 nC
   trⓘ - Rise Time: 88.2 nS
   Cossⓘ - Output Capacitance: 293.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
   Package: TO247

OSG65R069HSZF Transistor Equivalent Substitute - MOSFET Cross-Reference Search