OSG65R069HSZF Datasheet. Specs and Replacement
Type Designator: OSG65R069HSZF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 390 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 53 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 88.2 nS
Cossⓘ - Output Capacitance: 293.2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
Package: TO247
OSG65R069HSZF substitution
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OSG65R069HSZF datasheet
Detailed specifications: OSG65R038HZF, OSG65R040HT3F, OSG65R041HT3ZF, OSG65R041HZF, OSG65R042HF, OSG65R069H4SZF, OSG65R069HF, OSG65R069HSF, 10N60, OSG65R069HZF, OSG65R070FT3F, OSG65R070HT3F, OSG65R070PT3F, OSG65R074FT3ZF, OSG65R074HT3ZF, OSG65R074KT3ZF, OSG65R080HT3ZF
Keywords - OSG65R069HSZF MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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