OSG65R069HZF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG65R069HZF
   Marking Code: OSG65R069HZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 390 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 53 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60.2 nC
   trⓘ - Rise Time: 114.4 nS
   Cossⓘ - Output Capacitance: 283.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
   Package: TO247

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: HAT2169H | 2SK1637 | 2SK1642 | NDB708AE | WMX4N150D1 | 2SK1739A | FMC07N50E