OSG65R080TT3ZF Datasheet. Specs and Replacement

Type Designator: OSG65R080TT3ZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 379 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 118 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TOLL

OSG65R080TT3ZF substitution

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OSG65R080TT3ZF datasheet

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Detailed specifications: OSG65R070HT3F, OSG65R070PT3F, OSG65R074FT3ZF, OSG65R074HT3ZF, OSG65R074KT3ZF, OSG65R080HT3ZF, OSG65R080KT3ZF, OSG65R080PT3ZF, 2SK3878, OSG65R099FF, OSG65R099FSZF, OSG65R099FT3ZF, OSG65R099FZF, OSG65R099H4SZF, OSG65R099HF, OSG65R099HSF, OSG65R099HSZF

Keywords - OSG65R080TT3ZF MOSFET specs

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