OSG65R099FT3ZF Specs and Replacement
Type Designator: OSG65R099FT3ZF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 136 nS
Cossⓘ - Output Capacitance: 139 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO220F
OSG65R099FT3ZF substitution
OSG65R099FT3ZF datasheet
Detailed specifications: OSG65R074HT3ZF , OSG65R074KT3ZF , OSG65R080HT3ZF , OSG65R080KT3ZF , OSG65R080PT3ZF , OSG65R080TT3ZF , OSG65R099FF , OSG65R099FSZF , IRF9540N , OSG65R099FZF , OSG65R099H4SZF , OSG65R099HF , OSG65R099HSF , OSG65R099HSZF , OSG65R099HT3ZF , OSG65R099HZF , OSG65R099KT3ZF .
History: FDD6030BL | SLP18N50C
Keywords - OSG65R099FT3ZF MOSFET specs
OSG65R099FT3ZF cross reference
OSG65R099FT3ZF equivalent finder
OSG65R099FT3ZF pdf lookup
OSG65R099FT3ZF substitution
OSG65R099FT3ZF replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FDD6030BL | SLP18N50C
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