OSG65R099H4SZF Datasheet. Specs and Replacement

Type Designator: OSG65R099H4SZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60.3 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm

Package: TO247-4L

OSG65R099H4SZF substitution

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OSG65R099H4SZF datasheet

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Detailed specifications: OSG65R080HT3ZF, OSG65R080KT3ZF, OSG65R080PT3ZF, OSG65R080TT3ZF, OSG65R099FF, OSG65R099FSZF, OSG65R099FT3ZF, OSG65R099FZF, IRLB4132, OSG65R099HF, OSG65R099HSF, OSG65R099HSZF, OSG65R099HT3ZF, OSG65R099HZF, OSG65R099KT3ZF, OSG65R099PT3ZF, OSG65R099TT3ZF

Keywords - OSG65R099H4SZF MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.