OSG65R099HSF Datasheet. Specs and Replacement

Type Designator: OSG65R099HSF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55.6 nS

Cossⓘ - Output Capacitance: 206.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm

Package: TO247

OSG65R099HSF substitution

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OSG65R099HSF datasheet

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Detailed specifications: OSG65R080PT3ZF, OSG65R080TT3ZF, OSG65R099FF, OSG65R099FSZF, OSG65R099FT3ZF, OSG65R099FZF, OSG65R099H4SZF, OSG65R099HF, K3569, OSG65R099HSZF, OSG65R099HT3ZF, OSG65R099HZF, OSG65R099KT3ZF, OSG65R099PT3ZF, OSG65R099TT3ZF, OSG65R108HSZF, OSG65R120FT3F

Keywords - OSG65R099HSF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs