OSG65R099HSF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG65R099HSF
   Marking Code: OSG65R099HS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 65.7 nC
   trⓘ - Rise Time: 55.6 nS
   Cossⓘ - Output Capacitance: 206.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO247

OSG65R099HSF Transistor Equivalent Substitute - MOSFET Cross-Reference Search