OSG65R099HSZF Datasheet. Specs and Replacement

Type Designator: OSG65R099HSZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60.3 nS

Cossⓘ - Output Capacitance: 210.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm

Package: TO247

OSG65R099HSZF substitution

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Detailed specifications: OSG65R080TT3ZF, OSG65R099FF, OSG65R099FSZF, OSG65R099FT3ZF, OSG65R099FZF, OSG65R099H4SZF, OSG65R099HF, OSG65R099HSF, IRFP260, OSG65R099HT3ZF, OSG65R099HZF, OSG65R099KT3ZF, OSG65R099PT3ZF, OSG65R099TT3ZF, OSG65R108HSZF, OSG65R120FT3F, OSG65R125FF

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